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| BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier www..com ADE-208-705C (Z) 4th. Edition Nov. 1998 Features * Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. * High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz) * Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is "AY-". 2. BIC801M is individual type number of HITACHI BICMIC. BIC801M Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 +6 -0 20 150 150 -55 to +150 Unit V V V mA mW C C www..com Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 -- -- 0.5 7 22 1.6 0.6 -- 23 Typ -- -- -- -- -- 0.7 10 27 2.0 1.0 0.024 27 Max -- -- -- +100 +100 1.0 13 32 2.3 1.4 0.05 -- Unit V V V nA nA V mA mS pF pF pF dB Test Conditions I D = 200A VG2S = 0,VG1 = open I G1 = +10A VG2S = VDS = 0 I G2 = +10A VG1S = VDS = 0 VG1S = +5V VG2S = VDS = 0 VG2S = +5V VG1S = VDS = 0 VDS = 5V, ID = 100A VG1 = open VDS = 5V , VG2S = 4V VG1 = open VDS = 5V, ID = 10mA VG2S =4V, f = 1kHz VDS = 5V, VG2S =4V VG1 = open f = 1MHz VDS = 5V, VG2S =4V VG1 = open Noise figure Power gain NF1 PG2 -- 17 1.1 21.5 1.6 -- dB dB f = 200MHz VDS = 5V, VG2S =4V VG1 = open Noise figure NF2 -- 1.75 2.3 dB f = 900MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance I DS(op) |yfs| c iss c oss Reverse transfer capacitance c rss Power gain PG1 2 BIC801M www..com Main Characteristics 3 BIC801M www..com 4 BIC801M www..com 5 BIC801M www..com 6 BIC801M www..com 7 BIC801M www..com 8 BIC801M www..com 9 BIC801M Sparameter (V DS = VG1 = 5V, VG2S = 4V, VG1 = open, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.994 0.993 0.988 0.983 0.977 0.970 0.963 0.951 0.943 0.933 0.918 0.906 0.895 0.882 0.879 0.860 0.845 0.835 0.827 0.812 ANG -3.1 -6.6 -10.5 -14.1 -17.9 -21.8 -25.4 -28.8 -32.4 -35.4 -39.1 -42.0 -45.5 -48.7 -51.1 -54.6 -58.3 -60.7 -63.3 -66.4 S21 MAG 2.54 2.52 2.51 2.49 2.46 2.43 2.40 2.37 2.34 2.29 2.25 2.21 2.17 2.13 2.09 2.05 2.02 1.96 1.92 1.88 ANG 175.5 171.0 166.4 161.6 157.2 152.8 148.6 143.7 139.4 135.1 131.1 127.2 123.0 119.4 115.6 111.7 107.8 104.2 100.5 97.0 S12 MAG 0.00132 0.00201 0.00228 0.00323 0.00420 0.00514 0.00532 0.00629 0.00665 0.00700 0.00756 0.00790 0.00836 0.00820 0.00818 0.00819 0.00798 0.00787 0.00727 0.00758 ANG 50.0 59.8 66.1 66.7 70.2 71.9 76.1 74.2 70.8 71.6 69.3 68.1 67.6 66.1 65.9 66.5 70.7 71.9 73.1 75.6 S22 MAG 0.978 0.981 0.979 0.979 0.976 0.974 0.971 0.969 0.966 0.962 0.958 0.954 0.951 0.946 0.942 0.938 0.933 0.929 0.924 0.919 www..com ANG -2.4 -5.1 -7.5 -10.1 -12.7 -15.1 -17.6 -20.1 -22.4 -24.9 -27.3 -29.7 -32.2 -34.4 -36.8 -39.2 -41.5 -43.8 -46.2 -48.5 10 BIC801M www..com Package Dimensions Unit: mm 11 BIC801M Cautions www..com 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 12 |
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